1N4006G-F vs 1SS352TPHR2 feature comparison

1N4006G-F Rectron Semiconductor

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1SS352TPHR2 Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer RECTRON LTD TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.70
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE FAST RECOVERY
Breakdown Voltage-Min 800 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.2 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 R-PDSO-G2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 30 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-STD-202E AEC-Q101
Rep Pk Reverse Voltage-Max 800 V 85 V
Reverse Current-Max 0.2 µA 0.5 µA
Reverse Test Voltage 800 V 80 V
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-G2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W
Reverse Recovery Time-Max 0.004 µs
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N4006G-F with alternatives

Compare 1SS352TPHR2 with alternatives