1N4007G vs 1N4007 feature comparison

1N4007G Galaxy Semi-Conductor Co Ltd

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1N4007 American Power Devices Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD AMERICAN POWER DEVICES INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 40 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 1 2
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2
Pin Count 2
HTS Code 8541.10.00.80
Case Connection ISOLATED
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Terminal Finish TIN
Terminal Form WIRE
Terminal Position AXIAL

Compare 1N4007G with alternatives

Compare 1N4007 with alternatives