1N4007G vs UF1007-T feature comparison

1N4007G Galaxy Semi-Conductor Co Ltd

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UF1007-T Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD DIODES INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.7 V
Non-rep Pk Forward Current-Max 40 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 1 1
Pbfree Code No
Part Package Code DO-41
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count 2
HTS Code 8541.10.00.80
Factory Lead Time 8 Weeks
Date Of Intro 1998-01-01
Samacsys Manufacturer Diodes Incorporated
Application GENERAL PURPOSE
Case Connection ISOLATED
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.075 µs
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 30

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