1N4149 vs 1N4149 feature comparison

1N4149 Galaxy Microelectronics

Buy Now Datasheet

1N4149 NTE Electronics Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD NTE ELECTRONICS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 0.45 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Output Current-Max 0.15 A 0.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Base Number Matches 1 1
Application GENERAL PURPOSE
Breakdown Voltage-Min 75 V
Case Connection ISOLATED
Diode Element Material SILICON
JEDEC-95 Code DO-35
JESD-30 Code O-XALF-W2
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.5 W
Reverse Current-Max 0.025 µA
Reverse Test Voltage 20 V
Terminal Form WIRE
Terminal Position AXIAL

Compare 1N4149 with alternatives

Compare 1N4149 with alternatives