1N4149 vs LBAT46JT1G feature comparison

1N4149 Galaxy Microelectronics

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LBAT46JT1G LRC Leshan Radio Co Ltd

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD LESHAN RADIO CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 0.45 A
Number of Elements 1 1
Number of Phases 1 1
Output Current-Max 0.15 A 0.15 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs
Surface Mount NO YES
Base Number Matches 1 2
Package Description R-PDSO-G2
HTS Code 8541.10.00.70
Diode Element Material SILICON
JESD-30 Code R-PDSO-G2
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position DUAL

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