1N4149 vs 1N4149 feature comparison

1N4149 Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

1N4149 NTE Electronics Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD NTE ELECTRONICS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 0.45 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Output Current-Max 0.15 A 0.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Base Number Matches 1 1
Application GENERAL PURPOSE
Breakdown Voltage-Min 75 V
Case Connection ISOLATED
Diode Element Material SILICON
JEDEC-95 Code DO-35
JESD-30 Code O-XALF-W2
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.5 W
Reverse Current-Max 0.025 µA
Reverse Test Voltage 20 V
Terminal Form WIRE
Terminal Position AXIAL

Compare 1N4149 with alternatives

Compare 1N4149 with alternatives