1N4149 vs LBAT46JT1G feature comparison

1N4149 Galaxy Semi-Conductor Co Ltd

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LBAT46JT1G LRC Leshan Radio Co Ltd

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD LESHAN RADIO CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 0.45 A
Number of Elements 1 1
Number of Phases 1 1
Output Current-Max 0.15 A 0.15 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs
Surface Mount NO YES
Base Number Matches 1 2
Package Description R-PDSO-G2
HTS Code 8541.10.00.70
Diode Element Material SILICON
JESD-30 Code R-PDSO-G2
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position DUAL

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