1N4149 vs 1N4149 feature comparison

1N4149 Microsemi Corporation

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1N4149 Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Microsemi Corporation
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 0.5 A 2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 200 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.2 A 0.15 A
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.025 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 10 1
Part Package Code DO-35
Package Description DO-35, 2 PIN
Pin Count 2
Rep Pk Reverse Voltage-Max 100 V

Compare 1N4149 with alternatives

Compare 1N4149 with alternatives