1N4149 vs IMBD4448-G3-08 feature comparison

1N4149 NTE Electronics Inc

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IMBD4448-G3-08 Vishay Intertechnologies

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Part Life Cycle Code Active Active
Ihs Manufacturer NTE ELECTRONICS INC VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 75 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-35
JESD-30 Code O-XALF-W2 R-PDSO-G3
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 0.5 A 0.15 A
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Power Dissipation-Max 0.5 W 0.35 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 0.025 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 20 V
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Package Description GREEN PACKAGE-3
Pin Count 3
HTS Code 8541.10.00.70
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare IMBD4448-G3-08 with alternatives