1N4149
vs
1N914BA0
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
INVENSYS SENSOR SYSTEMS
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
2 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Base Number Matches |
36
|
1
|
| Package Description |
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
|
| HTS Code |
|
8541.10.00.70
|
| Application |
|
GENERAL PURPOSE
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-35
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max |
|
0.5 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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