1N4448 vs 1N4447 feature comparison

1N4448 Bytesonic Corporation

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1N4447 Galaxy Microelectronics

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Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 100 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Non-rep Pk Forward Current-Max 0.5 A 0.45 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.5 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 75 V
Surface Mount NO NO
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 3 1
Rohs Code Yes
Peak Reflow Temperature (Cel) 260

Compare 1N4448 with alternatives

Compare 1N4447 with alternatives