1N4448W-L0RHG vs S-L1N4148WT1G feature comparison

1N4448W-L0RHG Taiwan Semiconductor

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S-L1N4148WT1G LRC Leshan Radio Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD LESHAN RADIO CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.4 W 0.35 W
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-G2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N4448W-L0RHG with alternatives

Compare S-L1N4148WT1G with alternatives