1N4448WG vs BAL99 feature comparison

1N4448WG Galaxy Microelectronics

Buy Now Datasheet

BAL99 Galaxy Microelectronics

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY FAST RECOVERY
Breakdown Voltage-Min 75 V 70 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.4 W 0.3 W
Rep Pk Reverse Voltage-Max 75 V 70 V
Reverse Current-Max 2.5 µA 2.5 µA
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Reverse Test Voltage 75 V 70 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 33
Rohs Code Yes
Part Package Code SOT-23
Package Description SOT-23, 3 PIN
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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