1N4448WS vs 1N4448WS-AU_R1_000A1 feature comparison

1N4448WS Galaxy Microelectronics

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1N4448WS-AU_R1_000A1 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD PAN JIT INTERNATIONAL INC
Package Description SOD-323, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY GENERAL PURPOSE
Breakdown Voltage-Min 75 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G2 R-PDSO-F2
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 0.15 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.2 W 0.25 W
Rep Pk Reverse Voltage-Max 75 V 100 V
Reverse Current-Max 2.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Base Number Matches 29 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare 1N4448WS-AU_R1_000A1 with alternatives