1N4448WS-H vs 1N4448WS feature comparison

1N4448WS-H Formosa Microsemi Co Ltd

Buy Now Datasheet

1N4448WS Galaxy Microelectronics

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Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-G2 SOD-323, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.5 W 0.2 W
Rep Pk Reverse Voltage-Max 100 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 29
Rohs Code Yes
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 0.5 A
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V

Compare 1N4448WS-H with alternatives

Compare 1N4448WS with alternatives