1N4448WSR9 vs BAR46FILM feature comparison

1N4448WSR9 Taiwan Semiconductor

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BAR46FILM STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD STMICROELECTRONICS
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PDSO-F2 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.2 W 0.23 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description PLASTIC PACKAGE-3
Pin Count 3
Factory Lead Time 25 Weeks
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) 235
Qualification Status Not Qualified
Technology SCHOTTKY
Time@Peak Reflow Temperature-Max (s) 30

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