1N4531,113
vs
933203980133
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Part Package Code |
DO-34
|
|
Package Description |
O-LALF-W2
|
O-LALF-W2
|
Pin Count |
2
|
|
Manufacturer Package Code |
SOD68
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.70
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
1 V
|
JEDEC-95 Code |
DO-34
|
DO-34
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e3
|
e3
|
Non-rep Pk Forward Current-Max |
4 A
|
4 A
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Output Current-Max |
0.2 A
|
0.2 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
Reverse Current-Max |
0.025 µA
|
0.025 µA
|
Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN
|
TIN
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Number of Phases |
|
1
|
|
|
|
Compare 1N4531,113 with alternatives
-
1N4531,113 vs 1N4531T-73
-
1N4531,113 vs JANTXV1N4531
-
1N4531,113 vs JAN1N4531
-
1N4531,113 vs JANTX1N4531
-
1N4531,113 vs 1N4531E3
-
1N4531,113 vs 1N4531,143
-
1N4531,113 vs 1N4531
-
1N4531,113 vs 1N4531T-91
-
1N4531,113 vs 933203980143
Compare 933203980133 with alternatives