1N4730A,113 vs BZX85-C3V9 feature comparison

1N4730A,113 NXP Semiconductors

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BZX85-C3V9 Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Transferred Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code DO-4
Package Description HERMETIC SEALED PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD66
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 9 Ω 15 Ω
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3
Knee Impedance-Max 400 Ω 500 Ω
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.3 W
Qualification Status Not Qualified
Reference Voltage-Nom 3.9 V 3.9 V
Reverse Current-Max 50 µA 10 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 5%
Working Test Current 64 mA 60 mA
Base Number Matches 2 7
Reference Standard MIL-STD-202
Reverse Test Voltage 1 V
Voltage Temp Coeff-Max -0.78 mV/°C

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