1N4732A,113
vs
BZV85-C4V7,113
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
DO-4
|
DO-4
|
| Package Description |
DO-41, 2 PIN
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD66
|
SOD66
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
4 Weeks
|
4 Weeks
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
8 Ω
|
13 Ω
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Knee Impedance-Max |
500 Ω
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
4.7 V
|
4.7 V
|
| Reverse Current-Max |
10 µA
|
3 µA
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN
|
TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
53 mA
|
45 mA
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
CAPACITANCE IS CAPTURED FROM THE GRAPH
|
| Reference Standard |
|
CECC50005-010
|
| Voltage Temp Coeff-Max |
|
0.7 mV/°C
|
|
|
|
Compare 1N4732A,113 with alternatives
Compare BZV85-C4V7,113 with alternatives