1N4736ARL
vs
FS10SM-12
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
RENESAS ELECTRONICS CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Diode Type |
ZENER DIODE
|
|
| Dynamic Impedance-Max |
3.5 Ω
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Power Dissipation-Max |
1 W
|
|
| Reference Voltage-Nom |
6.8 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Voltage Tol-Max |
5%
|
|
| Working Test Current |
37 mA
|
|
| Base Number Matches |
6
|
3
|
| Part Package Code |
|
TO-3P
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
|
3
|
| ECCN Code |
|
EAR99
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
600 V
|
| Drain Current-Max (ID) |
|
10 A
|
| Drain-source On Resistance-Max |
|
0.94 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
150 W
|
| Pulsed Drain Current-Max (IDM) |
|
30 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|