1N4747A,113 vs MX1N4747APE3 feature comparison

1N4747A,113 NXP Semiconductors

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MX1N4747APE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-4 DO-41
Package Description HERMETIC SEALED PACKAGE-2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code SOD66
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 4 Weeks
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 22 Ω
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Knee Impedance-Max 750 Ω
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 20 V 20 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 5% 5%
Working Test Current 12.5 mA 12.5 mA
Base Number Matches 2 1

Compare 1N4747A,113 with alternatives

Compare MX1N4747APE3 with alternatives