1N4747A vs 1N4747AB0G feature comparison

1N4747A Galaxy Microelectronics

Buy Now Datasheet

1N4747AB0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 22 Ω 22 Ω
Number of Elements 1 1
Operating Temperature-Max 200 °C 150 °C
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 1 W 1 W
Reference Voltage-Nom 20 V 20 V
Surface Mount NO NO
Technology ZENER ZENER
Voltage Tol-Max 5% 5%
Working Test Current 12.5 mA 12.5 mA
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED
JESD-609 Code e3
Polarity UNIDIRECTIONAL
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare 1N4747A with alternatives

Compare 1N4747AB0G with alternatives