1N4765
vs
1N4765E3TR
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
INVENSYS SENSOR SYSTEMS
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
350 Ω
|
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Power Dissipation-Max |
0.25 W
|
0.25 W
|
| Reference Voltage-Nom |
9.1 V
|
9.1 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
0.5 mA
|
|
| Base Number Matches |
14
|
1
|
| Package Description |
|
O-LALF-W2
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-204AA
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Technology |
|
ZENER
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Voltage Temp Coeff-Max |
|
0.91 mV/°C
|
|
|
|
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