1N4933G vs G1AFSF3 feature comparison

1N4933G Galaxy Microelectronics

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G1AFSF3 Yangzhou Yangjie Electronics Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Part Package Code DO-41
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.2 µs
Surface Mount NO YES
Base Number Matches 2 1
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE
Application GENERAL PURPOSE
Breakdown Voltage-Min 50 V
JESD-30 Code R-PDSO-F2
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 5 µA
Reverse Test Voltage 50 V
Terminal Form FLAT
Terminal Position DUAL

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