1N4933G
vs
EGF1AHE3_B/H
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.3 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Reverse Recovery Time-Max |
0.2 µs
|
0.05 µs
|
| Surface Mount |
NO
|
YES
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
8 Weeks
|
| Samacsys Manufacturer |
|
Vishay
|
| Additional Feature |
|
FREE WHEELING DIODE, HIGH RELIABILITY
|
| Application |
|
EFFICIENCY
|
| JEDEC-95 Code |
|
DO-214BA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Reference Standard |
|
AEC-Q101
|
| Reverse Current-Max |
|
5 µA
|
| Reverse Test Voltage |
|
50 V
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare 1N4933G with alternatives
Compare EGF1AHE3_B/H with alternatives