1N4935GHB0G
vs
1N4942-G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
O-PALF-W2
|
E-LALF-W2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-204AL
|
DO-41
|
| JESD-30 Code |
O-PALF-W2
|
E-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.2 µs
|
5 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
1
|
2
|
| Moisture Sensitivity Level |
|
1
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 1N4935GHB0G with alternatives
Compare 1N4942-G with alternatives