1N4947 vs F1T6GR0G feature comparison

1N4947 Galaxy Microelectronics

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F1T6GR0G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.25 µs 0.5 µs
Reverse Test Voltage 800 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code Yes
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 10

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Compare F1T6GR0G with alternatives