1N4947
vs
JAN1N4947
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
GENERAL INSTRUMENT CORP
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
E-LALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
PATENTED DEVICE
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-204AP
|
|
| JESD-30 Code |
E-LALF-W2
|
E-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Reverse Recovery Time-Max |
0.25 µs
|
5 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
1
|
| Rohs Code |
|
No
|
| Application |
|
GENERAL PURPOSE
|
| JESD-609 Code |
|
e0
|
| Number of Phases |
|
1
|
| Reference Standard |
|
MIL-19500
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N4947 with alternatives
Compare JAN1N4947 with alternatives