1N5226B-B vs 1N5226BAMO feature comparison

1N5226B-B Rectron Semiconductor

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1N5226BAMO NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer RECTRON LTD NXP SEMICONDUCTORS
Part Package Code DO-35
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Rectron
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 28 Ω
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3
Knee Impedance-Max 1600 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 3.3 V 3.3 V
Reverse Current-Max 25 µA 25 µA
Reverse Test Voltage 1 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 1 1
Operating Temperature-Min -65 °C
Voltage Temp Coeff-Max

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