1N5236B vs 1N5236B-G feature comparison

1N5236B Sangdest Microelectronics (Nanjing) Co Ltd

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1N5236B-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY, LOW IMPEDANCE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 6 Ω
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
Knee Impedance-Max 500 Ω
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 7.5 V 7.5 V
Reverse Current-Max 3 µA
Reverse Test Voltage 6 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 4 2
Package Description O-XALF-W2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED