1N5236B vs MV1N5226CE3TR feature comparison

1N5236B TDK Micronas GmbH

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MV1N5226CE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ITT SEMICONDUCTOR MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 6 Ω
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Knee Impedance-Max 500 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.417 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 7.5 V 3.3 V
Reverse Current-Max 3 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max 4.35 mV/°C
Voltage Tol-Max 5% 2%
Working Test Current 20 mA 20 mA
Base Number Matches 1 2
Part Package Code DO-7
Package Description O-LALF-W2
Pin Count 2
JEDEC-95 Code DO-204AA
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C

Compare 1N5236B with alternatives

Compare MV1N5226CE3TR with alternatives