1N5259BHE vs 1N5259B-GT3 feature comparison

1N5259BHE ROHM Semiconductor

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1N5259B-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Knee Impedance-Max 800 Ω
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.1 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Working Test Current 3.2 mA 3.2 mA
Base Number Matches 1 2
Rohs Code Yes
Package Description O-LALF-W2
JEDEC-95 Code DO-35
Moisture Sensitivity Level 1
Reference Voltage-Nom 39 V
Voltage Tol-Max 5%

Compare 1N5259BHE with alternatives

Compare 1N5259B-GT3 with alternatives