1N5262B vs 1N5262B feature comparison

1N5262B Sangdest Microelectronics (Nanjing) Co Ltd

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1N5262B TDK Micronas GmbH

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD ITT SEMICONDUCTOR
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY, LOW IMPEDANCE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 125 Ω 125 Ω
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Knee Impedance-Max 1100 Ω 1100 Ω
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 51 V 51 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Test Voltage 39 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 2.5 mA 2.5 mA
Base Number Matches 4 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)
Voltage Temp Coeff-Max 48.96 mV/°C

Compare 1N5262B with alternatives

Compare 1N5262B with alternatives