1N5399G
vs
1N5399GX0
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
HITANO ENTERPRISE CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
GENERAL PURPOSE
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.4 V
|
1 V
|
| JEDEC-95 Code |
DO-15
|
DO-15
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
1.5 A
|
1.5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
O-PALF-W2
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
PURE TIN
|
|
|
|
Compare 1N5399G with alternatives
Compare 1N5399GX0 with alternatives