1N5402GHR0G vs 1N5402GR0G feature comparison

1N5402GHR0G Taiwan Semiconductor

Buy Now Datasheet

1N5402GR0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10 10
Base Number Matches 1 1

Compare 1N5402GHR0G with alternatives

Compare 1N5402GR0G with alternatives