1N5404G vs 1N5404GB-G feature comparison

1N5404G Taiwan Semiconductor

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1N5404GB-G Comchip Technology Corporation Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD COMCHIP TECHNOLOGY CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JEDEC-95 Code DO-201AD DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 400 V 400 V
Surface Mount NO NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 22 1
Package Description O-PALF-W2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Reverse Current-Max 5 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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