1N5404G-H
vs
1N5404GHB0
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
FORMOSA MICROSEMI CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
GENERAL PURPOSE
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1 V
|
| JEDEC-95 Code |
DO-201AD
|
DO-201AD
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
O-PALF-W2
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| JESD-609 Code |
|
e3
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare 1N5404G-H with alternatives
Compare 1N5404GHB0 with alternatives