1N5406M22 vs 30DF6(Z) feature comparison

1N5406M22 Rectron Semiconductor

Buy Now Datasheet

30DF6(Z) Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer RECTRON LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-201AD DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Rohs Code Yes
Package Description O-PALF-W2
Forward Voltage-Max (VF) 1.2 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.4 µs

Compare 1N5406M22 with alternatives

Compare 30DF6(Z) with alternatives