1N5523D vs JAN1N5520B feature comparison

1N5523D International Semiconductor Inc

Buy Now Datasheet

JAN1N5520B Motorola Mobility LLC

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW NOISE LOW NOISE, HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 26 Ω
JEDEC-95 Code DO-35 DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 5.1 V 3.9 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 1% 5%
Working Test Current 0.005 mA 20 mA
Base Number Matches 1 1
Package Description O-LALF-W2
Operating Temperature-Min -65 °C
Reverse Current-Max 1 µA

Compare 1N5523D with alternatives

Compare JAN1N5520B with alternatives