1N5550
vs
1N5550
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
VOLTAGE MULTIPLIERS INC
|
GENERAL SEMICONDUCTOR INC
|
| Package Description |
HERMETIC SEALED PACKAGE-2
|
GLASS, G4, 2 PIN
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
GENERAL PURPOSE
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JESD-30 Code |
E-XALF-W2
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
150 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
5 A
|
3 A
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
2 µs
|
2 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
4
|
1
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare 1N5550 with alternatives
Compare 1N5550 with alternatives