1N5552US vs 1N5552US feature comparison

1N5552US Micross Components

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1N5552US Semtech Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROSS COMPONENTS SEMTECH CORP
Reach Compliance Code unknown unknown
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code O-LELF-R2 O-LELF-R2
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 3 A 3 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 2 µs 2 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 5 5
Package Description HERMETIC SEALED PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.80

Compare 1N5552US with alternatives

Compare 1N5552US with alternatives