1N5615
vs
JANHCB1N5615
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROSEMI CORP
|
| Part Package Code |
DO-7
|
DO-7
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Factory Lead Time |
20 Weeks
|
|
| Date Of Intro |
1974-04-15
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.6 V
|
1.2 V
|
| JESD-30 Code |
E-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
0.15 µs
|
0.15 µs
|
| Reverse Test Voltage |
200 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
36
|
1
|
| Package Description |
|
O-LALF-W2
|
| JEDEC-95 Code |
|
DO-7
|
| Reference Standard |
|
MIL-19500/429J
|
|
|
|
Compare 1N5615 with alternatives
Compare JANHCB1N5615 with alternatives