1N5711 vs 1N5711 feature comparison

1N5711 Galaxy Microelectronics

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1N5711 Excel (Suzhou) Semiconductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD EXCEL (SUZHOU) SEMICONDUCTOR CO LTD
Part Package Code DO-35
Reach Compliance Code unknown unknown
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.41 V 0.41 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Pk Forward Current-Max 2 A 2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.4 W 0.4 W
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Recovery Time-Max 0.001 µs 0.001 µs
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description GLASS PACKAGE-2
ECCN Code EAR99