1N5711 vs 1N5711 feature comparison

1N5711 Lite-On Semiconductor Corporation

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1N5711 Broadcom Limited

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP BROADCOM INC
Part Package Code DO-35
Package Description PLASTIC PACKAGE-2 GLASS PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-35
JESD-30 Code O-PALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.015 A 0.015 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Recovery Time-Max 0.001 µs
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 3
Rohs Code No
Samacsys Manufacturer Avago Technologies
Forward Voltage-Max (VF) 0.41 V
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Phases 1
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) 40

Compare 1N5711 with alternatives

Compare 1N5711 with alternatives