1N5711
vs
1N5711E3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
LITE-ON SEMICONDUCTOR CORP
|
MICROSEMI CORP
|
| Part Package Code |
DO-35
|
|
| Package Description |
PLASTIC PACKAGE-2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.015 A
|
0.033 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.25 W
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
70 V
|
|
| Reverse Recovery Time-Max |
0.001 µs
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
1
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Application |
|
GENERAL PURPOSE
|
|
|
|
Compare 1N5711 with alternatives
Compare 1N5711E3 with alternatives