1N5711E3 vs 1N5711E3 feature comparison

1N5711E3 Microchip Technology Inc

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1N5711E3 Microsemi Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code compliant compliant
Factory Lead Time 24 Weeks
Samacsys Manufacturer Microchip
Additional Feature METALLURGICALLY BONDED METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.033 A 0.033 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.70

Compare 1N5711E3 with alternatives

Compare 1N5711E3 with alternatives