1N5711E3
vs
JANTXV1N5711
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
AEROFLEX/METELICS INC
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
HERMETIC SEALED, GLASS PACAKGE-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
24 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.033 A
|
0.015 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| JESD-609 Code |
|
e3
|
| Power Dissipation-Max |
|
0.25 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare 1N5711E3 with alternatives
Compare JANTXV1N5711 with alternatives