1N5712
vs
1N5712UR-1E3
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
AVAGO TECHNOLOGIES INC
|
MICROSEMI CORP
|
| Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS, LL34, MELF-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Samacsys Manufacturer |
Avago Technologies
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.55 V
|
0.41 V
|
| JESD-30 Code |
O-LALF-W2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.035 A
|
0.075 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
6
|
1
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| JEDEC-95 Code |
|
DO-213AA
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N5712 with alternatives
Compare 1N5712UR-1E3 with alternatives