1N5712
vs
1N5712-1E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
HEWLETT PACKARD CO
|
MICROSEMI CORP
|
| Package Description |
GLASS PACKAGE-2
|
ROHS COMPLIANT, HERMETIC SEALED, DO-35, GLASS PACKAGE-2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.55 V
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.02 A
|
0.075 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.25 W
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
16 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
1
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JEDEC-95 Code |
|
DO-204AH
|
|
|
|
Compare 1N5712 with alternatives
Compare 1N5712-1E3 with alternatives