1N5809US
vs
1N5809US-TR
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
EIC SEMICONDUCTOR CO LTD
|
MICROSEMI CORP
|
| Package Description |
SMB, 2 PIN
|
O-LELF-R2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Application |
ULTRA FAST RECOVERY
|
ULTRA FAST RECOVERY
|
| Breakdown Voltage-Min |
110 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.875 V
|
|
| JEDEC-95 Code |
DO-214AA
|
|
| JESD-30 Code |
R-PDSO-C2
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
| Reverse Test Voltage |
100 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
12
|
1
|
| Pin Count |
|
2
|
| Case Connection |
|
ISOLATED
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N5809US with alternatives
Compare 1N5809US-TR with alternatives